| PART |
Description |
Maker |
| HGT1S12N60A4S HGTG12N60A4 HGTP12N60A4 FN4656 HGT1S |
600V, SMPS Series N-Channel IGBT
From old datasheet system
600V/ SMPS Series N-Channel IGBT
600V, SMPS Series N-Channel IGBT(600V,SMPS系列 N沟道绝缘栅双极型晶体 54 A, 600 V, N-CHANNEL IGBT, TO-247
600V, SMPS Series N-Channel IGBT(600V,SMPS系列 N沟道绝缘栅双极型晶体 54 A, 600 V, N-CHANNEL IGBT, TO-263AB
600V, SMPS Series N-Channel IGBT 54 A, 600 V, N-CHANNEL IGBT, TO-220AB
|
INTERSIL[Intersil Corporation]
Intersil, Corp.
Fairchild Semiconductor, Corp.
|
| STGB3NB60SD STGB3NB60SDT4 |
N-CHANNEL 3A - 600V D2PAK Power MESHIGBT N沟道3A 600V的D2PAK封装IGBT的电力网格⑩
Transient Surge Protection Thyristor; Package/Case:6-SOIC; Current, It av:2.2A; Reel Quantity:1500; Capacitance:100pF; Forward Current:5A; Forward Voltage:12V; Holding Current:100uA; Mounting Type:Surface Mount N沟道3A 600V的IGBT的采用D2PAK POWERMESH
N-CHANNEL 3A - 600V D2PAK Power MESH IGBT
N-CHANNEL 3A - 600V D2PAK POWERMESH IGBT
N-CHANNEL 3A - 600V D2PAK Power MESH⑩ IGBT
|
ST Microelectronics
STMicroelectronics N.V.
STMICROELECTRONICS[STMicroelectronics]
|
| FCH041N60F |
N-Channel SuperFETII FRFETMOSFET 600V, 76A, 41m
600V N-Channel MOSFET, FRFET
|
Fairchild Semiconductor
|
| STB4NC60 8256 STB4NC60T4 |
INTEGRATED EC000 MPU N沟道600V 1.8ohm - 4.2A D2PAK封装MOSFET的第二PowerMesh
N-CHANNEL 600V - 1.8ohm - 4.2A D2PAK PowerMesh?II MOSFET
N-CHANNEL 600V 1.8 OHM 4.2A D2PAK POWERMESH II MOSFET
From old datasheet system
N-CHANNEL 600V - 1.8ohm - 4.2A D2PAK PowerMesh⑩II MOSFET
N-CHANNEL 600V 1.8 OHM 4.2A D2PAK POWERMESH II MOSFET
|
STMicroelectronics N.V.
STMICROELECTRONICS[STMicroelectronics]
ST Microelectronics
|
| FQA10N60C |
600V N-Channel MOSFET
600V N-Channel Advance Q-FET C-Series
|
FAIRCHILD SEMICONDUCTOR CORP
FAIRCHILD[Fairchild Semiconductor]
|
| IRFBC30AS IRFBC30L IRFBC30AL IRFBC30ASTRL IRFBC30A |
600V Single N-Channel HEXFET Power MOSFET in a D2-Pak package
600V Single N-Channel HEXFET Power MOSFET in a TO-262 package
HEXFET? Power MOSFET
Power MOSFET(Vdss=600V/ Rds(on)max=2.2ohm/ Id=3.6A)
600V,3.6A,N-Channel HEXFET Power MOSFET for SMPS(600V,3.6A,N沟道 HEXFET 功率MOS场效应管,用于开关模式电
Power MOSFET(Vdss=600V, Rds(on)max=2.2ohm, Id=3.6A) 功率MOSFET（减振钢板基本\u003d 600V电压的Rds（on）最大值\u003d 2.2ohm，身份证\u003d 3.6A
|
IRF[International Rectifier]
International Rectifier, Corp.
|
| FCP9N60N FCPF9N60NT |
N-Channel MOSFET 600V, 9A, 0.385Ω
N-Channel MOSFET 600V, 9A, 0.385惟
N-Channel MOSFET 600V, 9A, 0.385楼?
|
Fairchild Semiconductor
|
| STF9NK60ZD STB9NK60ZD STB9NK60ZDT4 STP9NK60ZD |
N-CHANNEL 600V - 0.85 OHM - 7A TO-220/TO-220FP/D2PAK FAST DIODE SUPERMESH MOSFET
N-CHANNEL 600V - 0.85OHM - 7A TO-220/TO-220FP/DPAK SUPERFREDMESH MOSFET
From old datasheet system
N-CHANNEL 600V - 0.85? - 7A TO-220/TO-220FP/DPAK SuperFREDMesh MOSFET
N-CHANNEL 600V - 0.85 - 7A TO-220/TO-220FP/DPAK SuperFREDMesh MOSFET
|
ST Microelectronics
STMICROELECTRONICS[STMicroelectronics]
意法半导
|
| STS1HNC60 |
N-CHANNEL 600V 7 OHM 0.4A SO-8 POWERMESH II MOSFET
N-CHANNEL 600V - 7ohm - 0.4A SO-8 PowerMesh?II MOSFET
N-CHANNEL 600V - 7ohm - 0.4A SO-8 PowerMesh⑩II MOSFET N沟道600V 7ohm - 0.4A的SO - 8 MOSFET的第二PowerMesh
|
ST Microelectronics
STMICROELECTRONICS[STMicroelectronics]
意法半导
STMicroelectronics N.V.
|
| STD1NC60 STD1NC60T4 STD1NC60-1 |
N-CHANNEL 600V - 7ohm - 1.4A - DPAK/IPAK PowerMesh⑩II MOSFET N沟道600V 7ohm - 1.4A的DPAK /像是iPak PowerMesh第二MOSFET的⑩
N-CHANNEL 600V - 7ohm - 1.4A - DPAK/IPAK PowerMesh?II MOSFET
N-CHANNEL 600V - 7ohm - 1.4A - DPAK/IPAK PowerMeshII MOSFET
N-CHANNEL 600V 7 OHM 1.4A DPAK/IPAK POWERMESH II MOSFET
N-CHANNEL 600V 7 OHM 1.4A DPAK/IPAK POWERMESH II MOSFET
|
STMicroelectronics N.V.
意法半导
ST Microelectronics
|
| STP4NC60A STP4NC60AFP STB4NC60A-1 |
N-CHANNEL 600V 1.8 OHM 4.2A TO-220/TO-220FP/I2PAK POWERMESH II MOSFET
N-CHANNEL 600V - 1.8ohm - 4.2A TO-220/TO-220FP/I2PAK PowerMesh?II MOSFET
N-CHANNEL 600V - 1.8ohm - 4.2A TO-220/TO-220FP/I2PAK PowerMeshII MOSFET
N-CHANNEL 600V 1.8 OHM 4.2A TO-220/TO-220FP/I2PAK POWERMESH II MOSFET
N-CHANNEL 600V - 1.8ohm - 4.2A TO-220/TO-220FP/I2PAK PowerMesh⑩II MOSFET
32BIT MCU,GPT,SIM,QSM N沟道600V 1.8ohm - 4.2A TO-220/TO-220FP/I2PAK PowerMesh第二MOSFET的⑩
|
ST Microelectronics
STMICROELECTRONICS[STMicroelectronics]
意法半导
STMicroelectronics N.V.
|
| HGTG30N60C3D FN4041 |
63A, 600V, UFS Series N-Channel IGBT with Anti-Parallel Hyperfast Diodes(63A, 600V, UFS系列 N沟道绝缘栅双极型晶体 63 A, 600 V, N-CHANNEL IGBT, TO-247
From old datasheet system
|
Intersil, Corp.
INTERSIL[Intersil Corporation]
|
